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Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate
Tang, Jinke Dai, Jianbiao Wang, Kaiying Zhou, Weilie Ruzycki, Nancy Diebold, Ulrike
Tang, Jinke
Dai, Jianbiao
Wang, Kaiying
Zhou, Weilie
Ruzycki, Nancy
Diebold, Ulrike
Abstract
Description
A film of magnetic Fe3C islands separated by nanochannels of graphite was prepared with pulsed laser deposition on a Si substrate with a native SiO2 surface. When the temperature is increased above 250 K the resistance suddenly drops because electron conduction switches from the film to the Si inversion layer underneath. The film shows a negative magnetoresistance. The inversion layer exhibits a large positive magnetoresistance. The transition to the low resistance channel can be reversed by applying a large measuring current, making possible current-controlled switching between two types of electron magnetotransport at room temperature.
Date
2002-05-15
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University of Wyoming. Libraries
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Keywords
Physical Sciences and Mathematics