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Electronic structure change with Gd doping of HfO2 on silicon, The

Losovyj, Ya. B.
; 
Ketsman, Ihor
; 
Sokolov, A.
; 
Belashchenko, K. D.
; 
Dowben, P. A.
; 
Tang, Jinke
; 
Wang, Zhenjun
Abstract
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Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite cubic phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level.
Date
2007-09-26
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University of Wyoming. Libraries
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Physical Sciences and Mathematics
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https://wyoscholar.uwyo.edu/handle/internal/6220
 https://doi.org/10.15786/wyoscholar/9532
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Faculty Publications | Physics & Astronomy
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