Du, G. X.Babu, M. RameshHan, X. F.Deng, J. J.Wang, W. Z.Zhao, J. H.Wang, W. D.Tang, Jinke2024-02-122024-02-122009-02-23https://wyoscholar.uwyo.edu/handle/internal/6208https://doi.org/10.15786/wyoscholar/9634Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤ 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.enghttps://creativecommons.org/licenses/by/4.0/Physical Sciences and Mathematicsjournal contribution10.1063/1.3068418