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Electronic structure change with Gd doping of HfO2 on silicon, The

Losovyj, Ya. B.
Ketsman, Ihor
Sokolov, A.
Belashchenko, K. D.
Dowben, P. A.
Tang, Jinke
Wang, Zhenjun
Abstract
Description
Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite cubic phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level.
Date
2007-09-26
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Journal ISSN
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Publisher
University of Wyoming. Libraries