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Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
Du, G. X. Babu, M. Ramesh Han, X. F. Deng, J. J. Wang, W. Z. Zhao, J. H. Wang, W. D. Tang, Jinke
Du, G. X.
Babu, M. Ramesh
Han, X. F.
Deng, J. J.
Wang, W. Z.
Zhao, J. H.
Wang, W. D.
Tang, Jinke
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Abstract
Description
Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤ 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.
Date
2009-02-23
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University of Wyoming. Libraries
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Adobe PDF, 628.83 KB
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Physical Sciences and Mathematics