Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures

Du, G. X.; Babu, M. Ramesh; Han, X. F.; Deng, J. J.; Wang, W. Z.; Zhao, J. H.; Wang, W. D.; Tang, Jinke

doi:10.1063/1.3068418

FACW_PHAS_2009_10897550_Du_Badu_Han_Deng_Wang_Zhao_Tang.pdf (628.83 kB)

Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures

journal contribution

posted on 2021-11-15, 21:34 authored by G. X. Du, M. Ramesh Babu, X. F. Han, J. J. Deng, W. Z. Wang, J. H. Zhao, W. D. Wang, Jinke Tang

Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤ 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.