Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
journal contributionposted on 15.11.2021, 21:34 authored by G. X. Du, M. Ramesh Babu, X. F. Han, J. J. Deng, W. Z. Wang, J. H. Zhao, W. D. Wang, Jinke Tang
Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤ 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.
PublisherUniversity of Wyoming. Libraries
Journal titleJOURNAL OF APPLIED PHYSICS
CollectionFaculty Publications - Physics and Astronomy
- Library Sciences - LIBS