Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures
journal contributionposted on 23.02.2009, 00:00 by G. X. Du, M. Ramesh Babu, X. F. Han, J. J. Deng, W. Z. Wang, J. H. Zhao, W. D. Wang, Jinke Tang
Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field |H|≤ 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 μA. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented.