FACW_PHAS_2007_10773118_Losovyj_Ketsman_Sokolov_Belashchenko_Dowben_Tang_Wang.pdf (735.31 kB)
Electronic structure change with Gd doping of HfO2 on silicon, The
journal contributionposted on 2021-11-15, 21:34 authored by Ya. B. Losovyj, Ihor Ketsman, A. Sokolov, K. D. Belashchenko, P. A. Dowben, Jinke Tang, Zhenjun Wang
Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite cubic phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level.
PublisherUniversity of Wyoming. Libraries
Journal titleAPPLIED PHYSICS LETTERS
CollectionFaculty Publications - Physics and Astronomy
- Library Sciences - LIBS