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Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate

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journal contribution
posted on 15.11.2021, 21:33 by Jinke Tang, Jianbiao Dai, Kaiying Wang, Weilie Zhou, Nancy Ruzycki, Ulrike Diebold
A film of magnetic Fe3C islands separated by nanochannels of graphite was prepared with pulsed laser deposition on a Si substrate with a native SiO2 surface. When the temperature is increased above 250 K the resistance suddenly drops because electron conduction switches from the film to the Si inversion layer underneath. The film shows a negative magnetoresistance. The inversion layer exhibits a large positive magnetoresistance. The transition to the low resistance channel can be reversed by applying a large measuring current, making possible current-controlled switching between two types of electron magnetotransport at room temperature.

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eng

Language

English

Publisher

University of Wyoming. Libraries

Journal title

JOURNAL OF APPLIED PHYSICS

Collection

Faculty Publications - Physics and Astronomy

Department

  • Library Sciences - LIBS

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