FACW_PHAS_2008_10773118_Wang_Sui_Tang_Wang_Zhang_Lu_Liu_Su_Wei_Yu.pdf (475.2 kB)
Amplification of magnetoresistance of magnetite in an Fe3O4–SiO2–Si structure
journal contribution
posted on 2021-11-15, 21:33 authored by Xianjie Wang, Yu Sui, Jinke Tang, Cong Wang, Xingquan Zhang, Zhe Lu, Zhiguo Liu, Wenhui Su, Xiankui Wei, Richeng YuFilm of Fe3O4 was prepared with laser molecular beam epitaxy deposition on a Si substrate with a native SiO2 layer. When the temperature is increased above 250 K, the resistance drops rapidly because the conduction path starts to switch from the Fe3O4 film to the inversion layer underneath the SiO2 via thermally assisted tunneling. A greatly magnified low field negative magnetoresistance of Fe3O4 is observed at 280 K. The effect is similar to a metal-oxide-semiconductor field-effect transistor. The magnetoresistance becomes positive with further increase in the magnetic field due to the Lorentz force and other effects on the carriers in the inversion layer.
History
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engLanguage
EnglishPublisher
University of Wyoming. LibrariesJournal title
APPLIED PHYSICS LETTERSCollection
Faculty Publications - Physics and AstronomyDepartment
- Library Sciences - LIBS